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Beam profile characteristics of InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs |
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| Authors: | Hung-Pin D Yang I-Chen Hsu Gray Lin Nikolai A Maleev Hao-Chung Kuo |
| Institution: | a Nanophotonic Center, Industrial Technology Research Institute, Chutung 310, Hsinchu, Taiwan b Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30050, Taiwan c Ioffe Physico-Technical Institute, St. Petersburg 194021, Russia |
| Abstract: | An InGaAs sub-monolayer (SML) quantum dot photonic crystal vertical-cavity surface-emitting laser (QD PhC-VCSEL) for fiber-optic applications is first time demonstrated. The active region of the device contains 3 InGaAs SML QD layers. Each of the InGaAs SML QD layer is formed by alternate deposition of InAs (<1 ML) and GaAs. Single fundamental mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. Side-mode suppression ratio (SMSR) larger than 35 dB has been demonstrated over entire current operation range. The beam profile study of the PhC-VCSEL indicates that the laser beam is well confined by the photonic crystal structure of the device. The divergence angle of the devices remains almost unchanged with increasing current. |
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