Impurities detection by optical techniques in KH2PO4 crystals

In this paper we examine how optical techniques can be used for impurities (or defects) detection and identification in KH₂PO₄ (KDP) components. This is important in so far as some of these defects are responsible for a much weaker than expected Laser-Induced Damage Threshold (LIDT) in these materials, i.e. for a weaker resistance to a laser shot. KDP materials are investigated by photothermal deflection, fluorescence and photoexcitation with the aim of localizing and identifying the laser-induced damage precursors. The rapidly grown KDP crystals are shown to be heterogeneous from the absorption, fluorescence and composition point of view. Impurities concentrations are measured directly by Inductively Coupled Plasma Atomic Emission Spectrometry (ICP-AES) and tentatively correlated to some optical characteristics and to the LIDT of KDP materials.