Contrast enhancement on crystalline silicon in polarized reflection mode tip-enhanced Raman spectroscopy |
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Authors: | Quang Nguyen Razvigor Ossikovski |
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Institution: | a LPICM, Ecole Polytechnique, CNRS, 91128 Palaiseau, France b HORIBA Jobin Yvon SAS, Raman Division, 231 rue de Lille, 59650 Villeneuve d’Ascq, France |
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Abstract: | Tip-enhanced Raman spectroscopy in reflection mode makes possible the nanoscale characterization of non-transparent samples, such as silicon, inaccessible in transmission mode. However, a particular feature of this technique is the superposition of the far-field Raman signal with the near-field one generated in the tip vicinity sometimes resulting in a low near-field-to-far-field contrast. By using a polarized configuration and orientation optimization of a (0 0 1) crystalline Si sample we were able to enhance significantly the contrast through reducing the far-field contribution, reaching a value of about 40. This contrast enhancement method can be applied in principle to any crystalline sample. |
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Keywords: | 07 79 Fc 78 30 &minus j 42 25 Ja |
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