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Femtosecond laser ablation of crystals SiO2 and YAG
Authors:Shizhen Xu  Jianrong Qiu  Chengbin Li  Zhizhan Xu
Affiliation:a Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
b State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, P.O. Box 800-211, Shanghai 201800, China
c The Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
Abstract:Damage threshold of crystals SiO2 and YAG against 60-900 fs, 800 nm laser pulses are reported. The breakdown mechanisms were discussed based on the double-flux model and Keldysh theory. We found that impact ionization plays the important role in the femtosecond laser-induced damage in crystalline SiO2, while the roles of photoionization and impact ionization in YAG crystals depend on the laser pulse durations.
Keywords:42.88.+h   61.82.Ms   78.20.Ci
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