Diode-pumped passively Q-switched mode-locked Nd:YLF laser with uncoated GaAs saturable absorber |
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| Authors: | Shudi Pan Lin Xue Haitao Huang |
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| Affiliation: | a College of Physics and Electronics, Shandong Normal University, Jinan 250014, China
b National Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, China |
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| Abstract: | We have demonstrated passively Q-switched mode-locked all-solid-state Nd:YLF laser with an uncoated GaAs wafer as saturable absorber and output mirror simultaneously. Q-switched mode-locking pulses laser with about 100% modulation depth were obtained. The average output power is 890 mW at the incident pump power of 5.76 W, corresponding to an optical slop efficiency of 20%. The temporal duration of mode-locked pulses was about 21 ps. At the Q-switched repetition rate of 30 kHz, the energy and peak power of a single pulse near the maximum of the Q-switched envelope was estimated to be about 1.6 μJ and 76 kW. |
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| Keywords: | 42.55.Xi 42.60.Gd |
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