An investigation into EMI-induced noise in nanometer multi-quantum well InGaN LEDs

This study investigates the low-frequency noise induced by electromagnetic radiation interference (EMI) in a nanometer multi-quantum well InGaN LED (NMQLED). Theoretical models of the noise spectra and the EMI are constructed. In general, a good agreement is identified between the experimental and theoretical results. Both sets of results reveal that the magnitude of the EMI-induced noise is related to the pulse height, the output load, the parasitic capacitance, the interference frequency and the interference amplitude. It is shown that the harmonic noise increases with an increasing interference amplitude and frequency. The techniques presented in this study provide a systematic approach for obtaining the interference noise and signal-to-noise ratio (SNR) in LEDs and similar wavelength-based semiconductor devices.