Atomic structure of GaAs(001)-c(8×2) and adsorption sites of iodine atoms at low coverage |
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| Authors: | A. A. Vedeneev K. N. Eltsov |
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| Affiliation: | (1) Natural Science Research Center, Prokhorov Institute of General Physics, Russian Academy of Sciences, Moscow, 119991, Russia |
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| Abstract: | Atomically resolved scanning tunneling microscopy images observed by us correspond to the ζ model of GaAs(001)-c(8×2) atomic structure. At low coverage (θ < 0.1), iodine atoms occupy sites above vacation rows between arsenic atoms located in the upper layer. |
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