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| 非接触式半导体少子寿命测试方法——微波反射法 | |
| 引用本文： | 王正秋,龚海梅.非接触式半导体少子寿命测试方法——微波反射法[J].红外与毫米波学报,1996,15(1):77-80. |
| 作者姓名： | 王正秋 龚海梅 |
| 作者单位： | 中国科学院上海技术物理研究所 |
| 摘 要： | 介绍了一种非接触式用于测量少子寿命的微波反射法，并与通常的光电导衰退法进行了比较。 |
| 关 键 词： | 少子寿命 微波反射法 汞镉碲 |
STUDY OF MINORITY CARRIER LIFETIME IN SEMICONDUCTORS BY CONTACTLESS MEASUREMENT METHOD:MICROWAVE REFLECTANCE TECHNIQUE |
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| Wang Zhengqiu,Gong Haimei,Li Yanjin,Zhou Baoqing,Fang Jiaxiong.STUDY OF MINORITY CARRIER LIFETIME IN SEMICONDUCTORS BY CONTACTLESS MEASUREMENT METHOD:MICROWAVE REFLECTANCE TECHNIQUE[J].Journal of Infrared and Millimeter Waves,1996,15(1):77-80. | |
| Authors: | Wang Zhengqiu Gong Haimei Li Yanjin Zhou Baoqing Fang Jiaxiong |
| Abstract: | A contactless method of microwave reflectance (MR) measurement for the minority carrier lifetime in semiconductors was introduced and compared with the photoconduction decay (PCD) measurement method. |
| Keywords: | minority carrier lifetime microwave reflectance method contactlees HgCdTe |
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