Low-temperature motion of dislocations as a possible mechanism of formation of one-dimensional electronic structures in semiconductor crystals

A new mechanism is proposed for the formation of one-dimensional electronic structures in semiconductor crystals. The mechanism is based on controllable low-temperature glide of dislocations. Moving dislocations generate associations of intrinsic point defects in the form of one-dimensional chains, and the decay of the associations is impeded by low temperature. Experimental results and numerical estimates are presented for cadmium sulfide crystals. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 10, 639–644 (25 November 1997)