| Abstract: | Kyropoulos (Ky) method is the most suitable technique for the growth of high‐quality sapphire single crystal for substrate applications. Cracks are often observed in the grown ingot that significantly reduces industrial productivity. In the paper, cracking causes are analyzed by examining crystal shape, thermal stress and three‐dimensional effects during the stable growth of sapphire crystal. It is found that locally induced thermal stress around the shoulder of the crystal is the largest. However, thermal stress is not fully responsible for the cracks, since the predicted stress level is lower than a critical value regarding crystal cracking. Polycrystalline growth or/and other crystal defects must be another factor that degrades the critical value and makes the crystal more fragile. Simulation results further show that crystal shape has less effect on the thermal stress level, although experiments have shown that crack‐free crystals usually have smooth surfaces. The initial cracking position in the ingot predicted in simulation agrees well with experimental observation after considering crystal defects in a qualitative discussion. From the view of three‐dimensional simulation, the variation of heating condition during growth may result in high thermal stress locally that leads to the cracks at one side of the crystal. Additionally, three‐dimensionally unexpected temperature drop of the heater may be responsible for the sticking‐to‐crucible phenomenon at the shoulder region of the grown crystal. |
