Die Herstellung von einkristallinen Dünnschichten aus Halbleitern mit ausgeprägter Anisotropie durch gerichtete Kristallisation der Schmelze zwischen zwei Substraten

Investigation of monocrystalline thin layers (5 to 150 μm in thickness) of Te and CdSb orientedly grown between two substrates. The form of the solidifying front strongly influencing crystal perfection can be controlled. Thin layers grown with velocities < 0.25 cm · min⁻¹ are monocrystalline with etch pit densities of 6 · 10² cm⁻². The electrical quantities R_H, σ and α of the layers are nearly identical with those of bulk material. Doped monocrystalline CdSb layers had a minority carrier concentration of ∼ 10¹⁴ cm⁻³ at 77°K.