Low-temperature synthesis and room temperature ultraviolet lasing of nanocrystalline ZnO films |
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Authors: | T-W Kim T Kawazoe S Yamazaki M Ohtsu |
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Institution: | (1) Japan Science and Technology Corporation, 687-1, Tsuruma, Machida, Tokyo 194-0004, Japan;(2) Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama Kanagawa, 226-8502, Japan |
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Abstract: | Nanocrystalline ZnO films were fabricated via a simple method involving the oxidation of Zn films at a remarkably low temperature of 380 °C. X-ray diffraction study confirmed that the Zn films were completely oxidized even at the low temperature of 380 °C and the ZnO films fabricated were of polycrystalline wurtzite structure. Room temperature optical pumping using a frequency-quintupled Q-switched Nd:YAG laser ( =213 nm) exhibited that sharp peaks at around 3.12 eV emerged above excitation powers of 7 MW/cm2, demonstrating lasing in the ZnO films. These results represent that the process is a simple, promising approach for fabricating ZnO of sufficient optical performance for use as ultraviolet (UV) light emitters and an alternative UV laser source; both are key components in short-wavelength photonic devices. PACS 81.07.Bc; 61.46.+w; 68.55.-a; 78.55.Et; 42.55.Px |
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