Weak-link bi-epitaxial Josephson junctions in a YBa2Cu3O7−δ film on BaZrO3/CeO2/SrTiO3

A bi-epitaxial (001)YBa₂Cu₃O_7−δ /(110)BaZrO₃/(001)CeO₂ three-layer heterostructure has been grown on (100)SrTiO₃ by laser ablation. The epitaxial relations between the layers making up the heterostructure were derived from x-ray diffraction data. The I _cR_n product for the bi-epitaxial Josephson junctions thus obtained was within 1–1.5 mV for 4.2 K, and 30–60 μV for 77 K. The normal resistance R _n=(2–5 Ω) was practically independent of temperature. The magnetic field dependences of I _c had typically a clearly pronounced main maximum, followed by distorted subsequent peaks. Interaction of the Josephson ac current with self-induced electromagnetic waves at the 45° grain boundary and with external microwave radiation (f=11 GHz) produced current steps in the I-V characteristics of the bi-epitaxial junctions at the corresponding voltages. Fiz. Tverd. Tela (St. Petersburg) 39, 1732–1738 (October 1997)