Weak-link bi-epitaxial Josephson junctions in a YBa2Cu3O7?δ
film on BaZrO3/CeO2/SrTiO3 |
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Authors: | Yu A Boikov Z G Ivanov T Claeson |
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Institution: | 1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia 2. Physics Department, Chalmers Institute of Technology, S-41296, G?teborg, Sweden
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Abstract: | A bi-epitaxial (001)YBa2Cu3O7−δ
/(110)BaZrO3/(001)CeO2 three-layer heterostructure has been grown on (100)SrTiO3 by laser ablation. The epitaxial relations between the layers making up the heterostructure were derived from x-ray diffraction
data. The I
cRn product for the bi-epitaxial Josephson junctions thus obtained was within 1–1.5 mV for 4.2 K, and 30–60 μV for 77 K. The normal resistance R
n=(2–5 Ω) was practically independent of temperature. The magnetic field dependences of I
c had typically a clearly pronounced main maximum, followed by distorted subsequent peaks. Interaction of the Josephson ac
current with self-induced electromagnetic waves at the 45° grain boundary and with external microwave radiation (f=11 GHz) produced current steps in the I-V characteristics of the bi-epitaxial junctions at the corresponding voltages.
Fiz. Tverd. Tela (St. Petersburg) 39, 1732–1738 (October 1997) |
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