| 固态源MBE系统生长高质量的调制掺杂GaAs结构材料和InP/InP外延材料的兼容性研究 |
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| 引用本文： | 张冠杰,舒永春,皮彪,邢小东,林耀望,姚江宏,王占国,许京军.固态源MBE系统生长高质量的调制掺杂GaAs结构材料和InP/InP外延材料的兼容性研究[J].人工晶体学报,2005,34(3):395-398. |
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| 作者姓名： | 张冠杰 舒永春 皮彪 邢小东 林耀望 姚江宏 王占国 许京军 |
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| 作者单位： | 南开大学弱光非线性光子学材料先进技术及制备教育部重点实验室,天津,300457;南开大学弱光非线性光子学材料先进技术及制备教育部重点实验室,天津,300457;中国科学院半导体研究所半导体材料科学重点实验室,北京,100083 |
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| 基金项目： | The work supported financially by TEDA College of Naikai University |
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| 摘 要： | 通过固态源的分子束外延系统生长了调制掺杂AlGaAs/GaAs结构材料和InP/InP外延材料.在生长含磷材料之后,生长条件(真空状态)变差;我们通过采取合理的工艺方法和生长工艺条件的优化,获得了电子迁移率为1.86×105cm2/Vs(77K)调制掺杂AlGaAs/GaAs结构材料和电子迁移率为2.09×105cm2/Vs(77K)δ-Si掺杂AlGaAs/GaAs结构材料.InP/InP材料的电子迁移率为4.57×104 cm2/Vs(77K),该数值是目前国际报道最高迁移率值和最低的电子浓度的InP外延材料.成功地实现了在一个固态源分子束外延设备交替生长高质量的调制掺杂AlGaAs/GaAs结构材料和含磷材料.
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| 关 键 词： | 兼容性 调制掺杂GaAs InP/InP外延材料 高电子迁移率 分子束外延 固体磷源 |
| 文章编号： | 1000-985X(2005)03-0395-04 |
Compatibility Study on Growing High Quality Modulation Doped GaAs and InP/InP Epilayers by Solid Source Molecular Beam Epitaxy |
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| ZHANG Guan-jie,SHU Yong-chun,PI Biao,XING Xiao-dong,LIN Yao-wang,Yao Jiang-Hong,WANG Zhan-guo,XU Jing-jun.Compatibility Study on Growing High Quality Modulation Doped GaAs and InP/InP Epilayers by Solid Source Molecular Beam Epitaxy[J].Journal of Synthetic Crystals,2005,34(3):395-398. |
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| Authors: | ZHANG Guan-jie SHU Yong-chun PI Biao XING Xiao-dong LIN Yao-wang Yao Jiang-Hong WANG Zhan-guo XU Jing-jun |
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| Institution: | ZHANG Guan-jie~1,SHU Yong-chun~1,PI Biao~1,XING Xiao-dong~1,LIN Yao-wang~1,2,YAO Jiang-hong~1,WANG Zhan-guo~1,2,XU Jing-jun~1 |
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| Abstract: | The modulation-doped AlGaAs/GaAs structures ( MD-GaAs ) and InP/InP epilayers have been grown by solid-source molecular beam epitaxy(SSMBE) system. After growing phosphorous contained materials, growth conditions were seriously deteriorated, but by using an appropriate method and optimized growth conditions via Hall measurements, 77K electron mobility of 1.86 × 105cm2/Vs for modulationdoped AlGaAs/GaAs structures, 2.09 × 105cm2/Vs for δ-doping Si:AlGaAs/GaAs structures, 4.57 ×104 cm2/Vs for InP/InP epilayers were achieved. The results show that the InP layer with thickness less than 2.5μm is a material with the highest mobility and the lowest electron concentration reported up to date. It comes true that alternative growth of high quality modulation doped GaAs and phosphorous contained materials (P-contained) in same SSMBE system can be successfully realized. |
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| Keywords: | compatibility MD-GaAs material InP/InP epilayers material high electron mobility MBE solid-phosphorous-source |
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