Molecular precursors for the CVD of niobium and tantalum nitride |
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| Institution: | 1. Department of Chemistry, Christopher Ingold Laboratories, University College London, 20 Gordon Street, London WC1H 0AJ, UK;2. Department of Chemistry, Imperial College London, South Kensington, London SW7 2AZ, UK;1. Institute of Physics, Chemnitz University of Technology, 09107 Chemnitz, Germany;2. Center for Microtechnologies, Chemnitz University of Technology, 09107 Chemnitz, Germany;3. Fraunhofer Institute for Electronic Nano Systems (ENAS), 09126 Chemnitz, Germany;4. Dresden Center for Computational Materials Science (DCMS), TU Dresden, 01062 Dresden, Germany |
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| Abstract: | Treatment of NbCl5 with excess HN(SiMe2Ph)2 in toluene resulted in the formation of crystalline NbCl3(NSiMe2Ph)(NH2SiMe2Ph)]2. In the presence of excess 3,5-lutidine (3,5-Me2C5H3N), the reaction of TaCl5 with 2 equivalents of HN(SiMe3)2 resulted in the isolation of the monomeric complex TaCl3(NSiMe3)(NC5H3Me2-3,5)2]. The X-ray crystal structure of TaCl3(NSiMe3)(NC5H3Me2-3,5)2] has been determined. Low pressure chemical vapour deposition of NbCl3(NSiMe2Ph)(NH2SiMe2Ph)]2 and TaCl3(NSiMe3)(NC5H3Me2-3,5)2] forms thin films of niobium and tantalum nitride, respectively, at 600 °C. |
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