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In-situ current-voltage characteristics of the n-type GaAs substrate in HF:Et-OH electrolyte |
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| Authors: | L Beji Z Mazouz A Othmane |
| Institution: | a Laboratoire de physique et de chimie des interfaces, Faculté des Sciences 5019 Monastir, Tunisia b Laboratoire de physico-chimie des Matériaux Solides, FS-Bizerte, 7021 Jarzouna, Tunisia c Laboratoire de Biophysique, Faculté de Médecine de Monastir, Tunisia |
| Abstract: | In-situ characterisation of the n+-GaAs/HF:Et-OH interface is studied by current-voltage, J(V). The experimental current-potential exhibits the presence of three potential regions, which are attributed to different reaction mechanisms between HF and n+-type GaAs surface. Depending on HF concentration a current peak appears in the J(V) characteristics. Scanning electron microscopy (SEM) images of samples at different point of the J(V) characteristic exhibits different surface morphologies which depend strongly on the electrochemical anodization conditions. |
| Keywords: | A Interfaces A Nanostructures A Semiconductors D Electrochemical properties |
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