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Determination of electrical and solar cell parameters of FTO/CuPc/Al Schottky devices |
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| Authors: | KR Rajesh Shaji Varghese CS Menon |
| Institution: | a Department of Metallurgical Engineering and Material Science, Indian Institute of Technology Bombay, Mumbai 400076, India b Department of Physics, St. Thomas College, Kozhencherry, 689641 Kerala, India c School of Pure and Applied Physics, Mahatma Gandhi University, Kottayam, 686560 Kerala, India |
| Abstract: | A Schottky structure is fabricated using CuPc sandwiched between fluorinated tin oxide (FTO) and aluminium electrodes. The electrical properties of the device are measured at room temperature. Permittivity of the device is calculated from capacitance measurements. The saturation current density,  , diode ideality factor, n=3.02 and barrier height,  are determined for the Schottky juction. Reverse bias  versus  is interpreted in terms of Schottky emission. Solar cell parameters are determined from the J-V characteristics. Power conversion efficiency, η of 0.0024% is obtained for the cell. Band gap energy of the material is determined from UV-visible absorption spectrum. |
| Keywords: | A Semiconductors A Thin films B Vapor deposition D Electrical properties D Transport properties |
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