| AlN靶材射频磁控溅射制备AlN薄膜及性质研究 |
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| 引用本文： | 阿布都艾则孜&#;阿布来提,杨世才,简基康,郑毓峰,孙言飞,吴荣.AlN靶材射频磁控溅射制备AlN薄膜及性质研究[J].新疆大学学报(理工版),2009(3):327-331. |
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| 作者姓名： | 阿布都艾则孜&#;阿布来提 杨世才 简基康 郑毓峰 孙言飞 吴荣 |
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| 作者单位： | 新疆大学物理科学与技术学院,新疆乌鲁木齐830046 |
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| 基金项目： | 基金项目：国家自然科学基金资助项目（No.10864004;No.50862008）;新疆大学博士启动基金（No.BS080109;No.BS060110） |
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| 摘 要： | 以AlN作为靶材，使用射频磁控溅射法在Si（100）和玻璃衬底上，在纯氮气气氛条件下制备得到AlN薄膜，并研究了衬底温度对溥膜的结构，形貌和性质的影响．实验表明，衬底温度为370℃的条件下制备的AlN溥膜具有C轴择优取向，薄膜表面均匀、致密和平整，均方根粗糙度为4．83nm．随着基片温度的增加，溥膜的折射率增加，对应着薄膜从非晶态到晶态过程的演变．
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| 关 键 词： | AlN靶 射频溅射 倾斜扫描(STD) AFM 折射率 |
Properties of Aluminum Nitride Thin Films Grown by Radio Frequency Magnetron Sputtering Using AlN Target |
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| Abduleziz Ablat,YANG Shi-cai,JIAN Ji-kang,ZHENG Yu-feng,SUN Yan-fei,WU Rong.Properties of Aluminum Nitride Thin Films Grown by Radio Frequency Magnetron Sputtering Using AlN Target[J].Journal of Xinjiang University(Science & Engineering),2009(3):327-331. |
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| Authors: | Abduleziz Ablat YANG Shi-cai JIAN Ji-kang ZHENG Yu-feng SUN Yan-fei WU Rong |
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| Institution: | t (College of Physics Science and Technology, Xinjiang University, Urnmqi, Xinjiang 830046, China) |
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| Abstract: | Aluminum nitride （AlN） films were grown on Si（100） and glass substrates by radio frequency magnetron sputtering in pure nitrogen, using a pure aluminum nitride target. Structure, surface morphology and optical properties of AlN films dependence of substrate temperature were investigated. C-axis preferred and smooth surface AlN films with surface roughness 4.83nm were obtained at substrate temperature of 370℃. With increasing substrate temperature the refractive index of films increased and films structures have been changed from amorphous to crystallite state. |
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| Keywords: | AlN target RF Sputtering STD AFM Refractive Index |
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