Raman-gain, linewidth, and effective g -value with spin-flip-Raman scattering in inSb

In this paper we report on measurements of spin-flip-Raman gain inn-InSb as a function of the magnetic field. The measurements were carried out at temperatures of 1.8 K and 4.2 K and at a carrier concentration of 1.35×10¹⁵ cm⁻³. The Raman cross sections obtained from these results, e.g. 1.25×10⁻²⁰ cm²/sr at a magnetic field of 10 kG and a pump frequency of 1884.35 cm⁻¹, agree very well with those theoretically predicted by Wherrett and Wolland. Furthermore, these measurements yield line shapes and linewidths of the spontaneous scattering (100–1500 MHz) and allow the determination of the effectiveg-value with an accuracy known from ESR-investigations. These results are discussed in terms of already published theoretical investigations.