Formation of organic monolayers on silicon via gas-phase photochemical reactions |
| |
Authors: | Eves Brian J Lopinski Gregory P |
| |
Institution: | Steacie Institute for Molecular Sciences, National Research Council, Ottawa, Ontario, Canada. |
| |
Abstract: | A new method for the formation of molecular monolayers on silicon surfaces utilizing gas-phase photochemical reactions is reported. Hydrogen-terminated Si(111) surfaces were exposed to various gas-phase molecules (hexene, benzaldehyde, and allylamine) and irradiated with ultraviolet light from a mercury lamp. The surfaces were studied with in situ Fourier transform infrared spectroscopy, high-resolution electron energy loss spectroscopy, and scanning tunneling microscopy. The generation of gas-phase radicals was found to be the initiator for organic monolayer formation via the abstraction of hydrogen from the H/Si(111) surface. Monolayer growth can occur through either a radical chain reaction mechanism or through direct radical attachment to the silicon dangling bonds. |
| |
Keywords: | |
本文献已被 PubMed 等数据库收录! |
|