Ir-based diffusion barriers for Ohmic contacts to p-GaN |
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Authors: | L.F. Voss B.P. Gila F. Ren |
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Affiliation: | a Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, USA b Department of Chemical Engineering, University of Florida, Gainesville, FL, 32611, USA |
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Abstract: | Ir-based electrical contacts to p-type GaN have been fabricated and characterized. Both GaN//Ni/Au/Ir/Au and GaN//Ni/Ir/Au contact structures were deposited, however, only the former produced Ohmic current-voltage characteristics. At an anneal temperature of 500 °C, the Ni/Au/Ir/Au contact had a specific contact resistance of ∼2 × 10−4 Ω cm2, comparable or superior to conventional Ni/Au contacts that are less thermally stable. Anneal temperatures above 500 °C caused the Ir-based contact to fail. Auger electron spectroscopy was used to obtain depth profiles of both types of contacts at a variety of temperatures in order to provide insight into the mechanism of Ohmic formation as well as potential reasons for failure. A comparison to other metallization schemes on p-GaN is also given. |
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Keywords: | GaN Ohmic contacts |
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