Theory of B(2)O and BeB(2) nanotubes: new semiconductors and metals in one dimension |
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Authors: | Zhang Peihong Crespi Vincent H |
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Affiliation: | Department of Physics and Materials Research Institute, The Pennsylvania State University, 104 Davey Lab, University Park, Pennsylvania 16802-6300, USA. |
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Abstract: | We describe two new boron-based nanotubes: B(2)O and BeB(2). Both are isoelectronic to graphite, have reasonable curvature energies, and have already been made in their bulk planar forms. The lowest energy allotrope of planar single-layer B(2)O is a semiconductor with a moderate band gap. The local density approximation band gap of the corresponding (3,0) B(2)O nanotube [similar in size to (9,0) carbon nanotube tube] is direct and around 1.6 eV, within a range inaccessible to previous C or BN nanotubes. Single-layer BeB(2) has a fascinating structure: the Be atoms rest above the boron hexagonal faces, nearly coplanar to the boron sheet. The unusual K-point pi-pi(*) Fermi-level degeneracy of graphite survives, while a new nearly pointlike Fermi surface appears at the M point. As a result, BeB(2) nanotubes are uniformly metallic. |
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