Steady-state modeling of resistive-gate MOSFETs |
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| Authors: | Fu H Cooper JA Jr |
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| Institution: | Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN; |
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| Abstract: | The Pao-Sah model for the long-channel MOSFET is generalized to include MOSFETs with resistive-gate electrodes (RG-MOSFETs). The RG-MOdSFETs current-voltage characteristics are studied using this extended Pao-Sah model. The steady-state operation of the RG-MOSFET can be divided into three regimes, separated by the uniform channel condition and the pinch-off condition, respectively. The regions of operation are discussed, and a simple analytical I-V expression is given for the device |
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