| 用伏安法测绘二极管伏安特性的研究 |
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| 引用本文： | 王新生 张银阁. 用伏安法测绘二极管伏安特性的研究[J]. 大学物理实验, 2000, 13(3): 41-43 |
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| 作者姓名： | 王新生 张银阁 |
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| 作者单位： | 南京建筑工程学院，南京，210009 |
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| 摘 要： | 本提出用伏安法测绘二极管伏安特性曲线的一种电路新接法，用该接法测量时，不需修正即可完全消除电表内阻的影响。
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| 关 键 词： | 二极管 接法 伏安特性曲线 电路 消除 电表内阻 伏安法 测量 |
RESEARCH ON MEASURING THE CHARACTERISTICS OF SEMICONDUCTOR DIODE WITH THE VOLTMETER AMMETER METHOD |
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| Wang Xinsheng Zhang Yinge. RESEARCH ON MEASURING THE CHARACTERISTICS OF SEMICONDUCTOR DIODE WITH THE VOLTMETER AMMETER METHOD[J]. Physical Experiment of College, 2000, 13(3): 41-43 |
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| Authors: | Wang Xinsheng Zhang Yinge |
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| Abstract: | A new way to connect electric circuit to measure the characteristic curre of semiconductor diode with the voltmeter ammeter method is introduced.The influence of the internal resistance of the electrometer can be got rid of completely without any revision when the method is adopted. |
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| Keywords: | semiconductor diode voltmeter ammeter method characteristic curre the internal resistance of the electrometer |
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