Single longitudinal mode lasing of Tm,Ho:YAP microchip laser at 2000.4 nm |
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| Authors: | Z G Wang B Q Yao G Li Y L Ju and Y Z Wang |
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| Institution: | (1) Department of Physics, Indian Institute of Technology, Hauz Khas, New Delhi, 110 016, India;; |
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| Abstract: | Single-longitudinal-mode operation of a b-cut Tm(5%), Ho(0.3%):YAlO3 microchip laser is reported. An incident pump power of 1.85 W is used to generate the maximum single-frequency output power
of 30 mW at 2000.4 nm, which represent a 1.6% optical-to-optical conversion efficiency. To the best of our knowledge, this
is the first time to report on single-frequency operation in Tm,Ho:YAP lasers. |
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