Growth study of indium-catalyzed silicon nanowires by plasma enhanced chemical vapor deposition |
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Authors: | I Zardo S Conesa-Boj S Estradé L Yu F Peiro P Roca i Cabarrocas J R Morante J Arbiol A Fontcuberta i Morral |
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Institution: | (1) Department of Electrical Engineering and Computer Science and Department of Physics, Massachusetts Institute of Technology, 77 Massachusetts Avenue, 02139 Cambridge, MA, USA;(2) Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, 02139 Cambridge, MA, USA;(3) Department of Chemistry, Massachusetts Institute of Technology, 77 Massachusetts Avenue, 02139 Cambridge, MA, USA;(4) Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, 02139 Cambridge, MA, USA;(5) Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, 02139 Cambridge, MA, USA;(6) Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology, 77 Massachusetts Avenue, 02139 Cambridge, MA, USA |
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Abstract: | Indium was used as a catalyst for the synthesis of silicon nanowires in a plasma enhanced chemical vapor deposition reactor.
In order to foster the catalytic activity of indium, the indium droplets had to be exposed to a hydrogen plasma prior to nanowire
growth in a silane plasma. The structure of the nanowires was investigated as a function of the growth conditions by electron
microscopy and Raman spectroscopy. The nanowires were found to crystallize along the <111>, <112> or <001> growth direction.
When growing on the <112> and <111> directions, they revealed a similar crystal quality and the presence of a high density
of twins along the {111} planes. The high density and periodicity of these twins lead to the formation of hexagonal domains
inside the cubic structure. The corresponding Raman signature was found to be a peak at 495 cm−1, in agreement with previous studies. Finally, electron energy loss spectroscopy indicates an occasional migration of indium
during growth. |
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