An AES investigation of aluminum,Al oxide and Al nitride thin films

The aluminum-L₂₃VV Auger spectra for elemental Al, Al oxide and Al nitride have been measured in an assessment of the utility of Auger spectroscopy in characterizing thin oxidized Al films used in model supported-metal catalyst studies. Clearly distinct spectra were found for the three surface chemical states. The oxide spectrum was shown to be similar to published spectra from bulk, single-crystalline Al₂O₃. Complete oxidation of Al films required exposure to O₂ at temperatures above room temperature. Room temperature exposure to hydrazine resulted in the complete nitriding of Al films. The spectrum for the nitride is similar in shape to published spectra from films produced by two alternative methods of nitriding. The hydrazine-exposure method of producing Al nitride films was found to offer an alternative, easily prepared support material for future model catalyst studies.