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Effect of ion bombardment at low energy on (100)InP surfaces,studied by Auger electron spectroscopy
Authors:B Achard  B Gruzza  C Pariset
Institution:Laboratoire de Physique des Milieux Condensés, UA CNRS No. 796, Université Clermont-Ferrand II, BP 45, F-63170 Aubière, France
Abstract:Surface cleaning of (100)InP substrates with an Ar+ ion beam of 250–400 eV is analysed by AES and shown as a function of time. The results obtained show the possibility of removing the contamination layer without any significant chemical damage to the InP surface.
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