Calculation of surface peak intensity in MeV ion scattering. II

Monte Carlo calculations have been performed to evaluate the surface peak from 1 MeV He ions incident on Si(001) and Si(111) crystal surfaces. Detailed angular dependences of the surface peaks were obtained for tilt angles of ?2° and azimuthal angles of ?45° in the vicinity of axial channeling directions. The validity of the triangular background subtraction is discussed for cases of tilted incidence from axial channeling directions. The multiple scattering effect in thin adlayers on the crystal, which is important in application of MeV ion scattering to interfaces studies, is simulated and correlated with evaluation of the interface peak value of the substrate atoms.