| Effect of Dopant Concentration in a Base Layer on Photocurrent——Voltage Characteristics of Photovoltaic Power Converters |
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| 作者姓名： | 霍雯雪 赵明龙 唐先胜 韩丽丽 邓震 江洋 王文新 陈弘 杜春花 贾海强 |
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| 作者单位： | 1. Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics, Institute of Physics,Chinese Academy of Sciences;2. University of Chinese Academy of Sciences;3. Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences;5. Songshan Lake Materials Laboratory |
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| 基金项目： | Supported by the National Natural Science Foundation of China (Grant Nos. 61704008 and 11574362)； |
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| 摘 要： | It is known that the p–n junction of an absorption region is a crucial part for power conversion efficiency of photovoltaic power converters. We fabricate four samples with different dopant concentrations in base layers.The dependences of power conversion efficiency and fill factor on input power are displayed by photocurrent–voltage measurement. Photoluminescence characteristics under open circuit and connected circuit conditions are also studied. It is found that the status of p–n junction mat...
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