Temperature dependence of the Debye screening length in heavily doped semiconductors having Gaussian band-tails |
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| Authors: | K P Ghatak A K Chowdhury S Ghosh A N Chakravarti |
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| Institution: | (1) Institute of Radio Physics and Electronics, University College of Technology, 92 Acharya Prafulla Chandra Road, 700009 Calcutta, India |
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| Abstract: | In the present work, a generalized expression is derived for the Debye screening length of the carriers in heavily doped semiconductors having Gaussian band-tails. The temperature dependence of the screening length is also computed for such semiconductors, taking n-type GaAs as an example.On leave of absence fromthe Department of Physics, B. N. College, University of Patna, India. |
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