Oxygen deficiency effect on resistive switching characteristics of copper oxide thin films |
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| Authors: | P. HuX.Y. Li J.Q. LuM. Yang Q.B. LvS.W. Li |
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| Affiliation: | State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics & Engineering, Sun Yat-sen University, Guangzhou 510275, People?s Republic of China |
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| Abstract: | In this Letter, bilayered Cu2O/CuO thin films were grown on Nb doped SrTiO3 (Nb:STO) substrates by plasma assisted molecular beam epitaxy. The current-voltage characteristics of Pt/Cu2O/CuO/Nb:STO devices show reproducible and pronounced current-voltage hysteresis which was induced by the CuO/Nb:STO junctions. By comparing the current-voltage curves of the bilayered and single-layered CuO thin films, we attribute the prominent switching behavior to the oxygen-vacancies-mediated-carriers-trapped-detrapped process with the aid of the applied forward (reversed) bias voltage. |
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| Keywords: | Molecular beam epitaxy Heterojunction Bipolar resistive switching Nonvolatile Oxygen vacancy |
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