On the interband pairing in doped graphane |
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Authors: | N. Kristoffel,K. Rä go |
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Affiliation: | a Institute of Physics, University of Tartu, 142 Riia Street, 51014 Tartu, Estonia b Institute of Physics, University of Tartu, 4 Tähe Street, 51010 Tartu, Estonia |
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Abstract: | An estimation shows that the interband pairing channel between the valence band components of doped graphane can support a superconducting transition temperature (or a contribution into this expected event) of the order of 100 K at the coupling strength near 1 eV. |
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Keywords: | Doped graphane Multiband pairing |
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