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Nitronyl nitroxide radicals as organic memory elements with both n- and p-type properties
Authors:Lee Junghyun  Lee Eunkyo  Kim Sangkwan  Bang Gyeong Sook  Shultz David A  Schmidt Robert D  Forbes Malcolm D E  Lee Hyoyoung
Affiliation:NCRI, Center for Smart Molecular Memory, Department of Chemistry, Sungkyunkwan University, Suwon 440-746, Republic of Korea.
Abstract:
Keywords:electron paramagnetic resonance  memory devices  molecular electronics  nitrogen radicals  organic radicals
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