Pressure-induced development of bonding in NiAs type compounds and polymorphism of NiP |
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Authors: | Przemyslaw Dera John D Lazarz |
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Institution: | a Center for Advanced Radiation Sources, The University of Chicago, Argonne National Laboratory, Building 434A 9700 South Cass Ave, Argonne, IL 60439, USA b High Pressure Science and Engineering Center and Department of Physics and Astronomy, University of Nevada, Las Vegas, NV 89154, USA |
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Abstract: | A reversible, displacive, pressure-induced structural phase transition has been found to occur in nickel monophosphide NiP at approximately 3.5 GPa by means of in situ synchrotron single-crystal X-ray diffraction. The new phase, with Pearson symbol oC56, assumes an orthorhombic structure with Cmc21 space group and unit cell parameters a=23.801(2) Å, b=5.9238(6) Å, and c=4.8479(4) Å at 5.79 GPa. The high-pressure phase is a superstructure of the ambient, oP16 phase with multiplicity of 3.5. The phosphorous sublattice gradually converts from the net of isolated P2 dimers found in the ambient NiP, towards zig-zag polymeric P∞ chains found in MnP-type structures. The transformation involves development of triatomic phosphorous clusters and interconnected Ni slabs with diamondoid topology. The high-pressure phase, which represents intermediate polymerization step, is a commensurately modulated superstructure of the NiAs aristotype. The phase transformation in NiP bears resemblance to the effect of successive substitution of Si or Ge in place of P found in the series of stoichiometric inhomogeneous linear structures in ternary NiP1−xSix and NiP1−xGex systems. |
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Keywords: | Nickel arsenide structure NiP High pressure Phase transitions Polymorphism Bonding |
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