Structure and photoluminescence properties of Ce-doped novel silicon-oxynitride Ba4−zMzSi8O20−3xN2x (M=Mg, Ca, Sr)

Structural and photoluminescence properties of undoped and Ce³⁺-doped novel silicon-oxynitride phosphors of Ba_4−zM_zSi₈O_20−3xN_2x (M=Mg, Sr, Ca) are reported. Single-phase solid solutions of Ba_4−zM_zSi₈O_20−3xN_2x oxynitride were synthesized by partial substitutions of 3O²⁻→2N³⁻ and Ba→M (M=Mg, Ca, Sr) in orthorhombic Ba₂Si₄O₁₀. The influences of the type of alkaline earth ions of M, the Ce³⁺ concentration on the photoluminescence properties and thermal quenching behaviors of Ba₃MSi₈O_20−3xN_2x (M=Mg, Ca, Sr, x=0.5) were investigated. Under excitation at about 330 nm, Ba₃MSi₈O_20−3xN_2x:Ce³⁺ (x=0.5) exhibits efficient blue emission centered at 400-450 nm in the range of 350-650 nm owing to the 5d→4f transition of Ce³⁺. The emission band of Ce³⁺ shifts to long wavelength by increasing the ionic size of M due to the modification of the crystal field, as well as the Ce³⁺ concentrations due to the Stokes shift and energy transfer or reabsorption of Ce³⁺ ions. Among the silicon-oxynitride phosphors of Ba₃MSi₈O_18.5N:Ce³⁺, M=Sr_0.6Ca_0.4 possesses the best thermal stability probably related to its high onset of the absorption edge of Ce³⁺.