Technology and characterisation of GaAsN/GaAs heterostructures for photodetector applications |
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Authors: | B ?ciana I Zborowska-Lindert D Pucicki B Boratyński D Radziewicz M T?acza?a J Serafińczuk P Poloczek G S?k J Misiewicz |
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Institution: | (1) Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, 11/17 Janiszewskiego Str., 50-372 Wrocław, Poland;(2) Institute of Physics, Wrocław University of Technology, 27 Wybrzeże Wyspiańskiego Str., 50-370 Wrocław, Poland |
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Abstract: | The nitrogen-containing conventional AIIIBV semiconductor alloys, so-called diluted nitrides (AIIIBV-N), have been extensively studied recently. Unusual properties of these materials make them very promising for applications
in lasers and very efficient multijunction solar cells. This work presents the technology and properties of undoped GaAs1-xNx/GaAs heterostructures used as active regions in the construction of metal-semiconductor-metal (MSM) photodetectors. The atmospheric
pressure metal organic vapour phase epitaxy (APMOVPE) was applied for growing MSM test structures. Their structural and optical
properties were examined using high resolution X-ray diffraction (HRXRD), photoluminescence (PL), and photoreflectance spectroscopy
(PR). Chemical wet etching was applied for forming an active region and a multifinger Schottky metallization was used as MSM
contacts. Dark and illuminated current-voltage characteristics were measured. Based on the obtained results, the main detector
parameters as responsivity and spectral response were estimated |
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Keywords: | diluted nitrides (AIIIBV-N) atmospheric pressure metal organic vapour phase epitaxy (APMOVPE) technique GaAsN/GaAs metal-semiconductor-metal (MSM) photodetectors DC I-V characteristics spectral response |
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