Estimating the extent of surface oxidation by measuring the porosity dependent dielectrics of oxygenated porous silicon

Surface oxidation and porosity variation play significant roles in the dielectric performance of porous silicon (PS) yet discriminating the contribution of these events is a challenge. Here we present an analytical solution that covers contributions from the components of silicon oxide surface, silicon backbone and voids using a serial–parallel capacitance structure. Agreement between modeling predictions and measurement has been realized, which turns out an effective method that enables us to estimate the extent of surface oxidation of a specimen by measuring the porosity dependent dielectric response of the chemically passivated PS, and provides guidelines that could be useful for designing dielectric porous structures with surface oxidation.