Novel Molecular Resist Based on a First Generation Dendrimer Possessing Furan Rings

Summary: A novel chemically amplified negative‐tone molecular resist for electron‐beam (EB) lithography was developed. The base matrix had six furan rings as a reactive functional group at its terminal. The resist containing the matrix, a crosslinker and a photoacid generator worked well as a negative‐tone resist with high sensitivity (3 µC · cm⁻²). Line and space patterns (1:2) of 200 nm could be fabricated.

SEM image of negative‐tone line and space patterns for the resist film formulated with G1‐dendrimer 5 .