The magnetoresistive effect induced by stress in spin-valve structure |
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Authors: | Qian Li-Jie Xu Xiao-Yong and Hu Jing-Guo |
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Institution: | College of Physics Science and Technology, Yangzhou
University, Yangzhou 225002, China |
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Abstract: | Using a method of free energy minimization, this paper investigates
the magnetization properties of a ferromagnetic (FM) monolayer and an
FM/antiferromagnetic (AFM) bilayer under a stress field,
respectively. It then investigates the magnetoresistance (MR) of
the spin-valve structure, which is built by an FM monolayer and an FM/AFM
bilayer, and its dependence upon the applied stress field.
The results show that under the stress field, the magnetization
properties of the FM monolayer is obviously different from that of the
FM/AFM bilayer, since the coupled AFM layer can obviously block the
magnetization of the FM layer. This phenomenon makes the MR of the
spin-valve structure become obvious. In detail, there are two
behaviors for the MR of the spin-valve structure dependence upon the
stress field distinguished by the coupling (FM coupling or AFM
coupling) between the FM layer and the FM/AFM bilayer. Either behavior of the MR
of the spin-valve structure depends on the stress field including
its value and orientation. Based on these investigations, a
perfect mechanical sensor at the nano-scale is suggested to be devised
experimentally. |
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Keywords: | magnetization magnetoresistance spin-valve structure stress field |
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