| Abstract: | X‐ray structural phase analysis of CdTe semiconductor, thermally annealed in air at temperature range 373‐773 K and annealing time 24 hrs, is investigated applying Rietveld method. The results showed that at low temperatures < 523 K, oxygen diffuses into the (1/21/21/2) interstitial sites of the CdTe lattice and its relative occupancy increases with the annealing temperature. For higher temperatures ≥ 523 K, the thermally grown oxide CdTeO3 phase is developed on expense of CdTe phase. The percentage phase abundance of each phase is determined at each temperature applying a standardless method. The rate of oxidation with temperature is found to be non‐linear. |
