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Studies on the growth and defects of La3Ga5SiO14 (LGS) crystals |
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| Authors: | Z M Wang D R Yuan D Xu M K Lv L H Pan |
| Abstract: | New and high quality piezoelectric crystals La3Ga5SiO14 (LGS) grown by the Czochralski method in a Platinum or Iridium crucible are reported in this paper. The growth defects in the LGS crystals were investigated by Transmission electron microscopy (TEM). It was found that cracks, inclusions, grain boundary and thermal stress in the LGS crystals. Their formation mechanisms and the method of eliminating these defects are discussed. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| Keywords: | La3Ga5SiO14 crystal crystal growth defects piezoelectric materials grain boundary |