Incorporation behaviors of group V elements in GaAsSbN grown by gas-source molecular-beam epitaxy |
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Authors: | Ta-Chun Ma Yan-Ting Lin Hao-Hsiung Lin |
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Institution: | aGraduate Institute of Electronics Engineering and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan |
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Abstract: | We report the incorporation behaviors of As, Sb, and N atoms in GaAsSbN grown by gas-source molecular-beam epitaxy. We found that N atom is more reactive and competitive than Sb atom at the growth temperature ranging from 420 to 450 °C. The increment in Sb beam flux hardly changes the N composition. However, the increment in N flux retards the incorporation of Sb. In addition, the increment in As2 flux makes the Sb and N compositions decrease at the same rate. Based on these results, we have successfully grown GaAsSbN epilayers lattice-matched to GaAs substrates. The energy gap at room temperature is as low as 0.803 eV. Negative deviation from Vegard's law in lattice constant is observed in these layers. |
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Keywords: | A3 Molecular beam epitaxy B2 Semiconducting quarternary alloys |
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