| 在c-面蓝宝石上控制生长高质量的ZnO单晶薄膜 |
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| 引用本文： | 张权林,苏龙兴,吴天准,王玉超,祝渊,陈明明,桂许春,汤子康.在c-面蓝宝石上控制生长高质量的ZnO单晶薄膜[J].发光学报,2015,36(10):1171-1177. |
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| 作者姓名： | 张权林 苏龙兴 吴天准 王玉超 祝渊 陈明明 桂许春 汤子康 |
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| 作者单位： | 1. 中山大学理工学院 光电材料与技术国家重点实验室, 广东 广州 510000;
2. 中国科学院 深圳先进技术研究院, 广东 深圳 518055;
3. 西昌卫星发射中心, 四川 西昌 615000;
4. 香港科技大学 物理系, 香港 999077 |
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| 基金项目： | "973"国家基础科学研究计划(2011CB302000); 国家自然科学基金(51232009,51202299)资助项目 |
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| 摘 要： | 利用Mg O和低温Zn O的缓冲层技术,在c面蓝宝石衬底上用等离子体辅助分子束外延(P-MBE)的方法生长了高质量的Zn O单晶薄膜。通过XRD测试,Zn O薄膜样品具有c轴方向的择优取向,其(002)方向摇摆曲线的半高宽(FWHM)仅为68.4 arcsec,(102)方向摇摆曲线的半高宽(FWHM)为1 150 arcsec,显示了外延薄膜极高的晶体质量。另外从扫描电子显微测试结果和原子力显微测试结果来看,Zn O薄膜具有极为平整的表面,3μm×3μm面积内的均方根粗糙度仅为0.842 nm,接近原子级的平整。拉曼光谱(Raman)和荧光光谱(PL)测试结果显示,Zn O薄膜样品内部的应力基本释放,而且具有极低的点缺陷密度。高质量Zn O单晶薄膜的实现为Zn O基的光电器件的制备提供了坚实的基础。
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| 关 键 词： | 缓冲层 应力 缺陷 ZnO 高质量薄膜 |
| 收稿时间： | 2015-07-13 |
Controllable Growth of High Quality ZnO Thin Film on c-sapphire |
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| ZHANG Quan-lin,SU Long-xing,WU Tian-zhun,WANG Yu-chao,ZHU Yuan,CHEN Ming-ming,GUI Xu-chun,TANG Zi-kang.Controllable Growth of High Quality ZnO Thin Film on c-sapphire[J].Chinese Journal of Luminescence,2015,36(10):1171-1177. |
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| Authors: | ZHANG Quan-lin SU Long-xing WU Tian-zhun WANG Yu-chao ZHU Yuan CHEN Ming-ming GUI Xu-chun TANG Zi-kang |
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| Institution: | 1. Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yet-Sen University, Guangzhou 510000, China;
2. Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China;
3. Xichang Satellite Launch Center, Xichang 615000, China;
4. Physics Department, Hong Kong University of Science and Technology, Hong Kong 999077, China |
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| Abstract: | High quality ZnO thin film was obtained on c-sapphire substrate by using a technique of plasma assisted molecular beam epitaxy (P-MBE), in which MgO and low temperature ZnO are used as buffer layers. High-resolution XRD measurement shows the full width at half maximum (FWHM) of (002) and (102) are only 68.4 and 1 150 arcsec, respectively. In the meantime, atomically smooth surface with root mean square (RMS) surface roughness of 0.842 nm is realized. In addition, Raman and photoluminescence (PL) measurements show that ZnO layer has extremely low stress level and defect density. The realization of high quality ZnO thin film pays a good way for the application of ZnO-based optoelectronic devices. |
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| Keywords: | buffer stress defects ZnO high quality thin film |
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