Fabrication and Luminescent Properties of 6H-SiC/3C-SiC/6H-SiC Quantum Well Structure |
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| Authors: | Jinfeng Liu Zhongliang Liu Peng Ren Pengshou Xu Xiufang Chen Xiangang Xu |
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| Affiliation: | aNational Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P. R. China;bInstitute of Fluid Physics, China Academy of Engineering Physics, Mianyang 621900, Sichuan Province, P. R. China;cState Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China |
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| Abstract: | Quantum well structure film of 6H-SiC/3C-SiC/6H-SiC was fabricated on 6H-SiC (0001) with the substrate temperature of 1350 K by solid source molecular beam epitaxy (SSMBE) through the variation of Si flux rate. The crystal polytypes and luminescent properties of the film were characterized by reflection high energy electron diffraction (RHEED) and photoluminescence (PL), respectively. The results of RHEED indicated that the film was 6H-SiC/3C-SiC/6H-SiC with the quantum well structure. The results of PL excited by He-Gd laser at room temperature showed that there were intense emissions in the range of 480–600 nm, which could not be observed from the substrate. The fitting peaks were consistent with the results calculated from the model of quantum well structure, which showed that such intense emissions were probably from the quantum wells with different widths. |
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| Keywords: | Quantum well SiC SSMBE RHEED Photoluminescence |
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