Connection of Gibbs layer gatherings with rate of mass transfer upon deposition of thin films with presence of impurity

The Gibbs layer gatherings on the condensation front of silver vapor in the presence of water vapor are analyzed. The front of condensation for analyzing the Gibbs concentration excess is calculated with the use of the modified Langmuir’s model of sorption. At a fixed flow of silver vapor and temperature of the substrate, the water-vapor pressure varies. Calculations have shown that the change of the water-vapor pressure changes the structure of the silver condensate, the structure of Gibbs layers, and microroughness on the condensation front. As a consequence, the efficiency of mass transfer varies. With growth of the water-vapor pressure, the condensation efficiency of both vapor components decreases. For obtaining the most equal surface of condensed silver film there is an optimum water-vapor pressure. The results allow the influence of noncondensed gas impurity on growth of thin films to be understood in greater detail and help to choose optimum modes for vacuum deposition. A general conclusion regarding the connection of the Gibbs layers and microroughness of the condensation surface with the intensity of mass transfer, leaving a framework of vacuum deposition processes, is drawn.