Effect of doping on positron annihilation in GaAs |
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| Authors: | O Takai Y Hisamatsu N Owada H Ishimura K Hinode S Tanigawa M Doyama |
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| Institution: | Department of Metallurgy and Materials Science, Faculty of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113, Japan |
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| Abstract: | The effect of doping on positron annihilation was studied in GaAs single crystals. The positron lifetimes in Si- and Ge-doped crystals (n-type) are similar to that in an instrinsic crystal. On the other hand, the lifetimes in Zn-, Cd-, Cr- and Mn-doped crystals (p-type) are shorter than that in an intrinsic one. The difference is small but significant. |
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