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Temperature-dependent characteristics of 4Hben SiC junction barrier Schottky diodes |
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| Authors: | Chen Feng-Ping Zhang Yu-Ming Zhang Yi-Men Tang Xiao-Yan Wang Yue-Hu Chen Wen-Hao |
| Affiliation: | School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xián 710071, China;School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xián 710071, China;School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xián 710071, China;School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xián 710071, China;School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xián 710071, China;School of Technical Physics, Xidian University, Xián 710071, China |
| Abstract: | The current-voltage characteristics of 4H-SiC junction barrier Schottky (JBS) diodes terminated by an offset field plate have been measured in the temperature range of 25-300 ℃. An experimental barrier height value of about 0.5 eV is obtained for the Ti/4H-SiC JBS diodes at room temperature. A decrease in the experimental barrier height and an increase in the ideality factor with decreasing temperature are shown. Reverse recovery testing also shows the temperature dependence of the peak recovery current density and the reverse recovery time. Finally, a discussion of reducing the reverse recovery time is presented. |
| Keywords: | 4H-SiC junction barrier Schottky diode temperature dependence electrical characteristics |
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