|
|||||
|
|
Quantum-Mechanical Study on Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors |
|
| Authors: | HU Guang-Xi WANG Ling-Li LIU Ran TANG Ting-Ao QIU Zhi-Jun |
| Institution: | ASIC ＆ System State Key Lab, Platform of Micro/Nano-Electronics, Fudan University, Shanghai 200433, China School of Microelectronics, Fudan University, Shanghai 200433, China |
| Abstract: | simiconductor devices, quantum mechanical effects, effective electron mobility |
| Keywords: | simiconductor devices quantum mechanical effects effective electron mobility |
| 本文献已被 维普 等数据库收录！ | |