以MgO为缓冲层的硅基铌酸锶钡薄膜取向特性与其波导结构的设计研究

采用溶胶－凝胶法在Si(100)基片上制备出择优取向的MgO薄膜,随后在其上生长出具有择优取向的铌酸锶钡铁电薄膜.实验发现,MgO缓冲层的应用可以大大提高SBN薄膜的择优取向性能.同时,用五层对称理想波导耦合模理论,以SBN为波导层,分析了波导损耗与厚度的关系. 通过对计算出的理想结果与实际相结合,以及对SBN在生长过程工艺与损耗关系的研究,制备出高质量、低损耗的SBN薄膜,为其在电光波导调制器等微系统中的应用打下良好的基础.

Study of Preferred Orientation Growth of SBN Thin Films with MgO Bufferlayer on the Silicon Substrate and Search of Waveguide Structure

Highly preferred orientation ferroelectric SBN thin films have been grown on MgO-buffered Si(100) substrate with the Sol-Gel method. The results show that the preferred orientation of SBN film can be considerably improved by adding the MgO buffer layer. Based on the theory of ideal five layers symmetrical waveguide-coupling film, this paper analyses the relationship of the optical loss and the thickness of the waveguide layer and the MgO-buffered layer. After investigating the connection between artwork and loss during SBN growth, single-crystal SBN ferroelectric thin film can be developed on Si(001) substrate with outstanding orientation. Therefore we can employ SBN having large E-O coefficient as electro-optical waveguide and make good use of it in micro system